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FSD200 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FSD200
Fairchild
Fairchild Semiconductor Fairchild
FSD200 Datasheet PDF : 18 Pages
First Prev 11 12 13 14 15 16 17 18
standby mode.
OSC
5uA
4
Vfb
250uA
S
Q
R
GATE
DRIVER
on/off
0.64V
/0.58V
FSD2xx
Burst Operation Block
Figure 12. Circuit for burst operation
Vo
Voset
VFB
0.64V
0.58V
Ids
FSD210, FSD200
Internal
Oscillator
Drain to
Source
voltage
138kHz
Drain to
Source
current
Vds
Waveform
130kHz
134kHz
138kHz
8kHz
Turn-on
Turn-off
point
Figure 14. Frequency Modulation Waveforms
CISPR22Q(PK)
CISPR22A(AV)
Vds
time
Figure 13. Burst mode operation
7. Frequency Modulation : EMI reduction can be accom-
plished by modulating the switching frequency of a SMPS.
Frequency modulation can reduce EMI by spreading the
energy over a wider frequency range. The amount of EMI
reduction is directly related to the level of modulation
(Fmod) and the rate of modulation. As can be seen in Figure
14, the frequency changes from 130kHz to 138kHz in 4mS
for the FSD200/FSD210. Frequency modulation allows the
use of a cost effective inductor instead of an AC input mode
choke to satisfy the requirements of world wide EMI limits.
Frequency(MHz)
Figure 15. FSDH0165 Full Range EMI scan(100kHz, no
Frequency Modulation) with charger set
CISPR22Q(PK)
CISPR22A(AV)
Frequency(MHz)
Figure 16. FSD210 Full Range EMI scan(134kHz, with Fre-
quency Modulation) with charger set
11

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