FS4KM-12A View Datasheet(PDF) - MITSUBISHI ELECTRIC
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FS4KM-12A Datasheet PDF : 4 Pages
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MITSUBISHI Nch POWER MOSFET
FS4KM-12A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 600V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 2A, VGS = 10V
ID = 2A, VGS = 10V
ID = 2A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 2A, VGS = 10V, RGEN = RGS = 50Ω
IS = 2A, VGS = 0V
Channel to case
Limits
Unit
Min.
Typ. Max.
600
—
—
V
±30
—
—
V
—
—
±10
µA
—
—
1
mA
2.5
3.0
3.5
V
—
1.8
2.4
Ω
—
3.6
4.8
V
2.4
4.0
—
S
—
650
—
pF
—
60
—
pF
—
15
—
pF
—
15
—
ns
—
15
—
ns
—
90
—
ns
—
25
—
ns
—
1.5
2.0
V
—
—
4.17 °C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
3
2
101
tw =
7
5
10µs
3
2
100µs
100
1ms
7
5
3
2
10ms
10–1
7 TC = 25°C
DC
5 Single Pulse
3
2
2 3 5 7101 2 3 5 7102 2 3 5 7
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
10
TC = 25°C
VGS = 20V,10V,8V
Pulse Test
8
6V
6
5V
4
2
PD = 30W
0
0
10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
5.0
6V
5V
4.0 VGS =
20V,10V,8V
3.0
2.0
PD = 30W
1.0
TC = 25°C
Pulse Test
0
0
4
8
12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
Sep. 2001
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