DIM400GDM33-F000 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
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DIM400GDM33-F000 Datasheet PDF : 8 Pages
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DIM400GDM33-F032
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
Erec
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Tcase = 125°C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
Erec
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
IC = 400A
VGE = ±15V
VCE = 1800V
RG(ON) = 8.2
RG(OFF) = 5.6
Cge = 110nF
LS ~ 100nH
IF = 400A
VCE = 1800V
dIF/dt = 2000A/μs
Min Typ. Max Units
2100
ns
210
ns
520
mJ
1130
ns
245
ns
620
mJ
160
μC
330
A
150
mJ
Test Conditions
IC = 400A
VGE = ±15V
VCE = 1800V
RG(ON) = 8.2
RG(OFF) = 5.6
Cge = 110nF
LS ~ 100nH
IF = 400A
VCE = 1800V
dIF/dt = 2000A/μs
Min Typ. Max Units
2150
ns
220
ns
600
mJ
1160
ns
285
ns
870
mJ
300
μC
400
A
300
mJ
4/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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