DIM800NSM33-A000 View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

View to exact match

DIM800NSM33-A000

Single Switch IGBT Module

Dynex Semiconductor 

DIM800NSM33-A000

ELECTRICAL CHARACTERISTICS

Tcase = 25˚C unless stated otherwise.

Symbol

Parameter

ICES

Collector cut-off current

I

GES

VGE(TH)

VCE(sat)

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

I

Diode forward current

F

IFM

Diode maximum forward current

VF

Diode forward voltage

C

ies

Cres

LM

R

INT

SCData

Input capacitance

Reverse transfer capacitance

Module inductance

Internal transistor resistance

Short circuit. ISC

Note:

L* is the circuit inductance + LM

Test Conditions

VGE = 0V, VCE = VCES

VGE = 0V, VCE = VCES, Tcase = 125˚C

VGE = ±20V, VCE = 0V

IC = 80mA, VGE = VCE

V = 15V, I = 800A

GE

C

VGE = 15V, IC = 800A, , Tcase = 125˚C

DC

tp = 1ms

I = 800A

F

IF = 800A, Tcase = 125˚C

VCE = 25V, VGE = 0V, f = 1MHz

VCE = 25V, VGE = 0V, f = 1MHz

-

-

Tj = 125˚C, VCC = 2500V,

I1

t

p

≤

10µs,

V

CE(max)

=

V

CES

–

L*.

di/dt

I

2

IEC 60747-9

Min. Typ. Max. Units

-

-

4

mA

-

-

60 mA

-

-

8

µA

4.5

5.5

6.5

V

-

3.2

-

V

-

4.0

-

V

-

800

-

A

-

1600

-

A

-

2.5

-

V

-

2.5

-

V

-

180

-

nF

-

10

-

nF

-

11

-

nH

- 0.135

-

mΩ

-

5200

-

A

4400

A

4/10

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

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