DIM200PHM33-A000 View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

View to exact match

DIM200PHM33-A000

Half Bridge IGBT Module

Dynex Semiconductor 

DIM200PHM33-A000

THERMAL AND MECHANICAL RATINGS

Internal insulation material: AlN

Baseplate material:

AlSiC

Creepage distance:

33mm

Clearance:

20mm

CTI (Critical Tracking Index): 175

Symbol

Parameter

Test Conditions

Rth(j-c)

Thermal resistance - transistor (per switch) Continuous dissipation -

junction to case

Rth(j-c)

Thermal resistance - diode (per switch)

Continuous dissipation -

junction to case

Rth(c-h)

Thermal resistance - case to heatsink

(per module)

Mounting torque 5Nm

(with mounting grease)

Tj

Junction temperature

Transistor

Diode

Tstg

Storage temperature range

-

Screw torque

-

Mounting - M6

Electrical connections - M5

Min. Typ. Max. Units

-

-

54 ˚C/kW

-

-

108 ˚C/kW

-

-

16 ˚C/kW

-

-

150 ˚C

-

-

125 ˚C

–40

-

125 ˚C

-

-

5

Nm

-

-

4

Nm

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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www.dynexsemi.com

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