DFM200PXM33-A000(2001) View Datasheet(PDF) - Dynex Semiconductor
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DFM200PXM33-A000 Datasheet PDF : 7 Pages
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DFM200PXM33-A000
TYPICAL CHARACTERISTICS
400
Tj = 25˚C
Tj = 125˚C
350
1000
300
100
250
Diode
200
150
10
100
50
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Forward voltage, VF - (V)
Fig. 2 Diode typical forward characteristics
1000
900
800
700
600
500
400
300
200
100
0
0
25
50
75
100
125
150
Case temperature, Tcase - (°C)
Fig. 5 Power dissipation
1
0.001
Ri (˚C/KW)
τi (ms)
1
2
3
4
2.9545 15.6459 22.2515 67.3233
0.0843 3.7205 33.2138 236.5275
0.01
0.1
1
10
Pulse width, tp - (s)
Fig. 4 Transient thermal impedance
350
300
250
200
150
100
50
0
0
25
50
75
100
125
150
Case temperature, Tcase - (°C)
Fig. 6DC current rating vs case temperature
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