REVERSE RECOVERY CHARACTERISTICS
OF CLAMP DIODE
(TYPICAL)
102
7
5
Irr
3
trr
2
101
7
5
3
2
100
100
23
5 7 101
Conditions:
VCC = 600V
VGE = ±15V
RG = 4.2Ω
Tj = 25°C
Inductive load
2 3 5 7 102
EMITTER CURRENT IE (A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 75A
18
16
VCC = 400V
14
VCC = 600V
12
10
8
6
4
2
0
0 200 400 600 800 1000 1200
GATE CHARGE QG (nC)
MITSUBISHI IGBT MODULES
CM75E3U-24F
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part & CLAMP DIODE part)
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7 101
101
7
5
3
2
IGBT part: Per unit base = Rth(j–c) = 0.28°C/W
FWDi part: Per unit base = Rth(j–c) = 0.47°C/W
CLAMP Di part: Per unit base = Rth(j–c) = 0.47°C/W
100
7
5
3
2
10–1
7
5
3
2
10–1
7
5
3
2
10–2
7
5
3
2
10–3
Single Pulse
TC = 25°C
3
2
10–2
7
5
3
2
10–3
10–52 3 5 710–42 3 5 710–3
TMIE (s)
Mar.2002