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Part Name
Description
DG858BW45(2000) View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
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DG858BW45
(Rev.:2000)
Gate Turn-off Thyristor
Dynex Semiconductor
DG858BW45 Datasheet PDF : 19 Pages
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DG858BW45
16000
14000
12000
Conditions:
T
j
= 125˚C
V
DM
= V
DRM
dI
GQ
/dt = 40A/µs
10000
C
s
= 4.0µF
C
s
= 3.0µF
C
s
= 2.5µF
C
s
= 2.0µF
8000
6000
4000
2000
0
0
500
1000
1500
2000
2500
3000
On-state current I
T
- (A)
Figure 20. Turn-off energy vs on-state current
25.0
22.5
Conditions:
C
s
= 3.0µF
dI
GQ
/dt = 40A/µs
20.0
T
j
= 125˚C
T
j
= 25˚C
3500
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0
500
1000
1500
2000
2500
On-state current I
T
- (A)
Figure 21. Gate storage time vs on-state current
3000
12/19
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