MMBTA13LT1 View Datasheet(PDF) - Leshan Radio Company

Part Name

Description

View to exact match

MMBTA13LT1

Darlington Amplifier Transistors

Leshan Radio Company 

LESHAN RADIO COMPANY, LTD.

Darlington Amplifier Transistors

NPN Silicon

3

COLLECTOR

MAXIMUM RATINGS

Rating

Symbol

Collector–Emitter Voltage

V CES

Collector–Base Voltage

V CBO

Emitter–Base Voltage

V EBO

Collector Current — Continuous I C

1

BASE

2

EMITTER

Value

30

30

10

300

Unit

Vdc

Vdc

Vdc

mAdc

MMBTA13LT1

MMBTA14LT1

3

1

2

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR– 5 Board, (1)

TA = 25°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

Alumina Substrate, (2) TA = 25°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

Symbol

PD

R θJA

PD

R θJA

T J , T stg

Max

Unit

225

mW

1.8

mW/°C

556

°C/W

300

mW

2.4

mW/°C

417

–55 to +150

°C/W

°C

DEVICE MARKING

MMBTA13LT1 = 1M; MMBTA14LT1 = 1N

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I C = 100 µAdc, V BE = 0)

Collector Cutoff Current

( V CB = 30Vdc, I E = 0)

Emitter Cutoff Current

( V EB = 10Vdc, I C = 0)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

V (BR)CEO

30

I CBO

—

I EBO

—

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Max

Unit

—

Vdc

100

nAdc

100

nAdc

M26–1/5

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