RF1K49090 View Datasheet(PDF) - Fairchild Semiconductor
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Description
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RF1K49090
Fairchild Semiconductor
RF1K49090 Datasheet PDF : 8 Pages
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RF1K49090
Absolute Maximum Ratings TA = 25oC Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ, Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (Pulse Width = 5s). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation
TA = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RF1K49090
12
12
±10
3.5
Refer to Peak Current Curve
Refer to UIS Curve
2
0.016
-55 to 150
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TA = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
ID = 250µA, VGS = 0V, (Figure 13)
VGS = VDS, ID = 250µA, (Figure 12)
VDS = 12V,
VGS = 0V
TA = 25oC
TA = 150oC
VGS = ±10V
ID = 3.5A, VGS = 5V, (Figures 9, 11)
VDD = 6V, ID ≈ 3.5A,
RL = 1.71Ω, VGS = 5V,
RGS = 25Ω
(Figure 10)
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction-to-Ambient
td(OFF)
tf
tOFF
Qg(TOT)
Qg(5)
Qg(TH)
CISS
COSS
CRSS
RθJA
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 9.6V,
ID = 3.5A,
RL = 2.74Ω
(Figure 15)
VDS = 10V, VGS = 0V,
f = 1MHz (Figure 14)
Pulse width = 1s
Device mounted on FR-4 material
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Voltage
Reverse Recovery Time
VSD
trr
ISD = 3.5A
ISD = 3.5A, dISD/dt = 100A/µs
MIN
TYP
MAX UNITS
12
-
-
V
1
-
2
V
-
-
1
µA
-
-
50
µA
-
-
±100
nA
-
-
0.050
Ω
-
-
100
ns
-
18
-
ns
-
60
-
ns
-
50
-
ns
-
60
-
ns
-
-
140
ns
-
20
25
nC
-
12
15
nC
-
0.9
1.2
nC
-
750
-
pF
-
700
-
pF
-
275
-
pF
-
-
62.5
oC/W
MIN
TYP
MAX UNITS
-
-
1.25
V
-
-
60
ns
©2002 Fairchild Semiconductor Corporation
RF1K49090 Rev. B
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