BYW52(2005) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
View to exact match
BYW52 Datasheet PDF : 6 Pages
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BYW52 / 53 / 54 / 55 / 56
Vishay Semiconductors
Parameter
Pulse energy in avalanche
mode, non repetitive (inductive
load switch off)
i2* t-rating
Junction and storage
temperature range
Test condition
I(BR)R = 1 A, Tj = 175 °C
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction ambient
l = 10 mm, TL = constant
on PC board with spacing
25 mm
Part
Symbol
Value
Unit
ER
20
mJ
i2*t
Tj = Tstg
8
- 55 to + 175
A2*s
°C
Symbol
RthJA
RthJA
Value
45
100
Unit
K/W
K/W
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
Reverse recovery charge
IF = 1 A
VR = VRRM
VR = VRRM, Tj = 100 °C
IR = 100 µA, tp/T = 0.01,
tp = 0.3 ms
VR = 4 V, f = 1 MHz
IF = 0.5 A, IR = 1 A, iR = 0.25 A
IF = 1 A, di/dt = 5 A/µs, VR = 50 V
IF = 1 A, di/dt = 5 A/µs
VF
IR
IR
V(BR)
CD
trr
trr
Qrr
Typ.
Max
Unit
0.9
1.0
V
0.1
1
µA
5
10
µA
1600
V
18
pF
4
µs
4
µs
200
nC
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
120
l
l
100
80
60
TL= constant
40
20
0
0 5 10 15 20 25 30
94 9101
l - Lead Length ( mm )
Figure 1. Typ. Thermal Resistance vs. Lead Length
10.000
1.000
Tj = 175 °C
0.100
Tj = 25 °C
0.010
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
16350
VF – Forward Voltage ( V )
Figure 2. Forward Current vs. Forward Voltage
www.vishay.com
2
Document Number 86049
Rev. 1.6, 14-Apr-05
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