BUW12AF View Datasheet(PDF) - Philips Electronics
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Description
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BUW12AF Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW12F; BUW12AF
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCEOsust collector-emitter sustaining voltage IC = 100 mA; IBoff = 0; L = 25 mH;
BUW12F
see Figs 8 and 9
400 −
−
V
BUW12AF
450 −
−
V
VCEsat
VBEsat
ICES
IEBO
hFE
collector-emitter saturation voltage
BUW12F
BUW12AF
IC = 6 A; IB = 1.2 A; see Figs 6 and 10 −
−
1.5 V
IC = 5 A; IB = 1 A; see Figs 6 and 10 −
−
1.5 V
base-emitter saturation voltage
BUW12F
BUW12AF
IC = 6 A; IB = 1.2 A; see Fig.6
IC = 5 A; IB = 1 A; see Fig.6
−
−
1.5 V
−
−
1.5 V
collector-emitter cut-off current
emitter-base cut-off current
VCE = VCESMmax; VBE = 0; note 1
VCE = VCESMmax; VBE = 0;
Tj = 125 °C; note 1
VEB = 9 V; IC = 0
−
−
1
mA
−
−
3
mA
−
−
10 mA
DC current gain
VCE = 5 V; IC = 10 mA; see Fig.11
10 18 35
VCE = 5 V; IC = 1 A; see Fig.11
10 20 35
Switching times resistive load (see Figs 12 and 13)
ton
turn-on time
BUW12F
BUW12AF
ts
storage time
BUW12F
BUW12AF
tf
fall time
BUW12F
BUW12AF
ICon = 6 A; IBon = IBoff = 1.2 A
ICon = 5 A; IBon = IBoff = 1 A
ICon = 6 A; IBon = IBoff = 1.2 A
ICon = 5 A; IBon = IBoff = 1 A
ICon = 6 A; IBon = IBoff = 1.2 A
ICon = 5 A; IBon = IBoff = 1 A
−
−
1
µs
−
−
1
µs
−
−
4
µs
−
−
4
µs
−
−
0.8 µs
−
−
0.8 µs
Switching times inductive load (see Figs 14 and 15)
ts
storage time
BUW12F
BUW12AF
tf
fall time
BUW12F
BUW12AF
ICon = 6 A; IB = 1.2 A; VCL = 250 V; −
Tc = 100 °C
ICon = 5 A; IB = 1 A; VCL = 300 V;
−
Tc = 100 °C
ICon = 6 A; IB = 1.2 A; VCL = 250 V; −
Tc = 100 °C
ICon = 5 A; IB = 1 A; VCL = 300 V;
−
Tc = 100 °C
1.9 2.5 µs
1.9 2.5 µs
200 300 ns
200 300 ns
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 14
4
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