BSS62 View Datasheet(PDF) - Philips Electronics
Part Name
Description
View to exact match
BSS62 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP Darlington transistors
Product specification
BSS61; BSS62
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
APPLICATIONS
• Industrial high gain amplification.
DESCRIPTION
PNP Darlington transistor in a TO-39 metal package.
NPN complements: BSS51 and BSS52.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfp1age
2
3
2
3
MAM310
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
BSS61
BSS62
VCES
collector-emitter voltage
BSS61
BSS62
IC
collector current (DC)
Ptot
total power dissipation
hFE
DC current gain
fT
transition frequency
CONDITIONS
open emitter
VBE = 0
Tamb ≤ 25 °C
Tcase ≤ 25 °C
IC = −500 mA; VCE = −10 V
IC = −500 mA; VCE = −5 V; f = 100 MHz
MIN.
−
−
−
−
−
−
−
2 000
−
TYP.
−
−
−
−
−
−
−
−
200
MAX. UNIT
−80 V
−90 V
−60 V
−80 V
−1
A
0.8
W
5
W
−
−
MHz
1997 May 14
2
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