BSM 181
BSM 181 R
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Static Characteristics
Drain-source breakdown voltage
VGS = 0, ID = 0.25 mA
Gate threshold voltage
VDS = VGS, ID = 1 mA
Zero gate voltage drain current
VDS = 800 V, VGS = 0
Tj = 25 ˚C
Tj = 125 ˚C
Gate-source leakage current
VGS = 20 V, VDS = 0
Drain-source on-state resistance
VGS = 10 V, ID = 23 A
Dynamic Characteristics
Forward transconductance
VDS ≥ 2 × ID × R , DS(on)max. ID = 23 A
Input capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Turn-on time ton (ton = td (on) + tr)
VCC = 400 V, VGS = 10 V
ID = 23 A, RGS = 3.3 Ω
Turn-off time toff (toff = td (off) + tf)
VCC = 400 V, VGS = 10 V
ID = 23 A, RGS = 3.3 Ω
Symbol
min.
V(BR)DSS
VGS(th)
I DSS
IGSS
RDS(on)
800
2.1
–
–
–
–
gfs
15
Ciss
–
Coss
–
Crss
–
td (on)
–
tr
–
td (off)
–
tf
–
Values
Unit
typ.
max.
V
–
–
3.0
4.0
µA
50
250
300
1000
nA
10
100
Ω
0.18
0.24
25
–
S
24
32
nF
1.3
2.0
0.5
0.8
60
–
ns
30
–
370
–
70
–
Semiconductor Group
58