052N03LS View Datasheet(PDF) - Infineon Technologies
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Description
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052N03LS Datasheet PDF : 13 Pages
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OptiMOSTMPower-MOSFET,30V
BSC052N03LS
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
ID
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ID,pulse
IAS
EAS
VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-
-
-
-
-20
-
-
-55
Values
Typ. Max.
-
57
-
36
-
48
-
31
-
17
-
228
-
35
-
12
-
20
-
28
-
2.5
-
150
Unit Note/TestCondition
VGS=10V,TC=25°C
VGS=10V,TC=100°C
A VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=50K/W1)
A TC=25°C
A TC=25°C
mJ ID=35A,RGS=25Ω
V-
-
TC=25°C
TA=25°C,RthJA=50K/W1)
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Thermal resistance, junction - case,
top
Device on PCB,
6 cm2 cooling area1)
RthJC
RthJC
RthJA
Values
Unit Note/TestCondition
Min. Typ. Max.
-
-
4.5 K/W -
-
-
20 K/W -
-
-
50 K/W -
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
Final Data Sheet
3
Rev.2.3,2019-11-04
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