052N03LS(2011) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
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052N03LS Datasheet PDF : 12 Pages
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OptiMOS™ Power-MOSFET
BSC052N03LS
2
Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2 Maximum ratings
Parameter
Symbol
Values
Unit Note / Test Condition
Min. Typ. Max.
Continuous drain current
ID
-
-
57
A
VGS=10 V, TC=25 °C
-
-
36
VGS=10 V, TC=100 °C
-
-
48
VGS=4.5 V, TC=25 °C
-
-
31
VGS=4.5 V, TC=100 °C
-
-
17
VGS=10 V, TA=25 °C,
RthJA=50 K/W1))
Pulsed drain current2)
Avalanche current, single pulse3)
ID,pulse
IAS
-
-
228
-
-
35
TC=25 °C
Avalanche energy, single pulse
EAS
-
-
12
mJ ID=35 A,RGS=25 Ω
Gate source voltage
VGS
-20 -
20
V
Power dissipation
Ptot
-
-
28
W TC=25 °C
-
-
2.5
TA=25 °C, RthJA=50 K/W1))
Operating and storage temperature Tj,Tstg
-55 -
150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
3
Thermal characteristics
Table 3 Thermal characteristics
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit Note /
Test Condition
Thermal resistance, junction - case RthJC
-
-
4.5
K/W
-
-
20
top
Device on PCB
RthJA
-
-
50
6 cm2 cooling area1)
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air
Final Data Sheet
2
2.0, 2011-03-01
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