BD645 View Datasheet(PDF) - Bourns, Inc
Part Name
Description
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BD645 Datasheet PDF : 4 Pages
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BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BD645
60
V(BR)CEO
Collector-emitter
breakdown voltage
IC = 30 mA
IB = 0
(see Note 5)
BD647
BD649
80
100
BD651
120
VCE = 30 V
IB = 0
BD645
0.5
ICEO
Collector-emitter
cut-off current
VCE = 40 V
VCE = 50 V
IB = 0
IB = 0
BD647
0.5
BD649
0.5
VCE = 60 V
IB = 0
BD651
0.5
VCB = 60 V
IE = 0
BD645
0.2
VCB = 80 V
IE = 0
BD647
0.2
VCB = 100 V
IE = 0
BD649
0.2
ICBO
Collector cut-off
current
VCB = 120 V
VCB = 40 V
IE = 0
IE = 0
TC = 150°C
BD651
BD645
0.2
2.0
VCB = 50 V
IE = 0
TC = 150°C
BD647
2.0
VCB = 60 V
IE = 0
TC = 150°C
BD649
2.0
VCB = 70 V
IE = 0
TC = 150°C
BD651
2.0
IEBO
Emitter cut-off
current
VEB = 5 V
IC = 0
(see Notes 5 and 6)
5
hFE
Forward current
transfer ratio
VCE = 3 V
IC = 3 A
(see Notes 5 and 6)
750
VCE(sat)
Collector-emitter
saturation voltage
IB = 12 mA
IB = 50 mA
IC = 3 A
IC = 5 A
(see Notes 5 and 6)
2
2.5
VBE(sat)
Base-emitter
saturation voltage
IB = 50 mA IC = 5 A
(see Notes 5 and 6)
3
VBE(on)
Base-emitter
voltage
VCE = 3 V
IC = 3 A
(see Notes 5 and 6)
2.5
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
2.0 °C/W
62.5 °C/W
2
MAY 1993 - REVISED JUNE 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
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