BD3021HFP-M(2009) View Datasheet(PDF) - ROHM Semiconductor
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Description
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BD3021HFP-M Datasheet PDF : 5 Pages
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○ELECTRICAL CHARACTERISTICS
（Unless otherwise specified, Ta=-40～+125℃，Vcc=13.5V，INH=5V，CLK=GND）
Parameter
Limit
Symbol
Min
Typ
Max
Overall Device
Bias current 1
Icc1
－
80
130
Bias current 2
Icc2
－
150
300
Regulator
Output voltage
Line regulation
VOUT 4.90 5.00 5.10
Line.Reg －
5
35
Load regulation
Dropout voltage
Load.Reg －
ΔVd
－
30
70
0.3
0.6
Ripple rejection
R.R.
45
55
－
Reset
Detection voltage
Hysteresis width
Output delay time Low High
（Power on reset time）
※1
Low output voltage
Min. operating voltage
Watchdog timer
CT switching threshold voltage High
CT switching threshold voltage Low
WDT Charge current
Vdet
4.40
4.50
4.60
VHS
50
100
150
TdLH
1.1
1.9
2.7
VRST
－
0.1
0.2
VOPL 1.5
－
－
VthH 1.08 1.15 1.25
VthL
0.13
0.15
0.17
Ictc
3.5
6.0
8.5
WDT Discharge current
Ictd
1.2
2.0
2.8
Watchdog monitor time Low ※2
TWH
3.0
5.0
7.0
Watchdog reset time
※3
TWL
1.0
1.7
2.4
CLK Input pulse width
TWCLK 500
－
－
INH
WDT OFF threshold voltage
WDT ON threshold voltage
VHINH
VOUT
×0.8
－
VOUT
VLINH
0
－
VOUT
×0.3
INH Input current
IINH
－
10
20
※1 TdLH can be changed by varying the CT capacitance value.
TdLH(s)≒(1.15×CT(μF))/Ictc(μA) (TYP)
※2 TWH can be changed by varying the CT capacitance value.
TWH(s)≒(1.00×CT(μF))/Ictd(μA) (TYP)
※3 TWL can be changed by varying the CT capacitance value.
TWL(s)≒(1.00×CT(μF))/Ictc(μA) (TYP)
○PHYSICAL DIMENSIONS, MARKING
MARKING
Unit
Conditions
μA Io=0mA
μA Io=50mA（Ta=25℃）
V Io=200mA
mV Vcc=5.6～36V
mV Io=5～200mA
V Vcc=4.75V, Io=200mA
dB
f=120Hz, ein=1Vrms,
Io=100mA
V
mV
ms
Vdet±0.5V（Vcc=VOUT）
CT=0.01μF
V VOUT=4.0V
V
V WDT ON, INH=Open
V WDT ON, INH=Open
μA WDT ON, INH=Open, CT=0V
μA
WDT ON,
INH=Open ,CT=1.3V
ms
WDT ON, INH=Open
CT=0.01μF（Ceramic Cap）
ms ※Characteristics of ceramic cap
not considered.
ns
V
V
μA INH=5V
BD3021
Lot No.
HRP-7 (UNIT：mm)
REV. B
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