BCW65 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
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| BCW65 Datasheet PDF : 0 Pages | |||
BCW65, BCW66
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10 mA, IB = 0
BCW65
32
-
BCW66
45
-
V
-
-
Collector-base breakdown voltage
V(BR)CBO
IC = 10 µA, IB = 0
BCW65
60
-
-
BCW66
75
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5
-
-
Collector cutoff current
VCB = 32 V, IE = 0
VCB = 45 V, IE = 0
BCW65
BCW66
ICBO
nA
-
-
20
-
-
20
Collector cutoff current
VCB = 32 V, IE = 0 , TA = 150 °C
VCB = 45 V, IE = 0 , TA = 150 °C
BCW65
BCW66
ICBO
µA
-
-
20
-
-
20
Emitter cutoff current
VEB = 4 V, IC = 0
IEBO
-
-
20 nA
DC current gain 1)
IC = 100 µA, VCE = 10 V
hFE
hFE-grp.A/F
hFE-grp.B/G
hFE-grp.C/H
35
-
50
-
80
-
-
-
-
-
DC current gain 1)
IC = 10 mA, VCE = 1 V
DC current gain 1)
IC = 100 mA, VCE = 1 V
hFE
hFE-grp.A/F
hFE-grp.B/G
hFE-grp.C/H
hFE
hFE-grp.A/F
hFE-grp.B/G
hFE-grp.C/H
75
-
-
110 -
-
180 -
-
100 160 250
160 250 400
250 350 630
1) Pulse test: t ≤ 300µs, D = 2%
2
Jul-10-2001
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