BCX13 View Datasheet(PDF) - Siemens AG

Part Name

Description

View to exact match

BCX13

PNP Silicon AF Switching Transistor

Siemens AG 

BCX 13

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics for transistor T1

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

Collector-base breakdown voltage

IC = 100 µA, IB = 0

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

Collector-base cutoff current

VCB = 100 V, IE = 0

VCB = 100 V, IE = 0, TA = 150 ˚C

Emitter cutoff current

VEB = 4 V

DC current gain1)

IC = 1 mA, VCE = 1 V

IC = 10 mA, VCE = 1 V

IC = 100 mA, VCE = 1 V

IC = 200 mA, VCE = 1 V

Collector-emitter saturation voltage1)

IC = 500 mA, IB = 50 mA

Base-emitter saturation voltage1)

IC = 500 mA, IB = 50 mA

AC characteristics

Transition frequency

IC = 20 mA, VCE = 5 V, f = 20 MHz

Output capacitance

VCB = 10 V, f = 1 MHz

Symbol

Values

Unit

min. typ. max.

V(BR)CE0 125

–

V(BR)CB0 125

–

V(BR)EBS 5

–

ICB0

–

–

–

–

IEB0

–

–

hFE

25

–

50

–

63

–

40

–

VCEsat

–

–

VBEsat

–

–

–

V

–

–

100 nA

10

µA

100 nA

–

–

–

–

–

1.0 V

1.6

fT

–

Cobo

–

120 –

12 –

MHz

pF

1) Pulse test: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group

2

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