BCR08AS-14AT14B10 View Datasheet(PDF) - Renesas Electronics
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BCR08AS-14AT14B10 Datasheet PDF : 4 Pages
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BCR08AS-14A
Preliminary
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
IDRM
—
—
1.0
mA Tj = 125°C, VDRM applied
On-state voltage
VTM
—
—
2.0
V
Tc = 25°C, ITM = 1.2 A,
Instantaneous measurement
Gate trigger voltageNote2
VFGT
—
—
2.0
V
Tj = 25°C, VD = 6 V, RL = 6 ,
VRGT
—
—
2.0
V
RG = 330
VRGT
—
—
2.0
V
Gate trigger currentNote2
IFGT
—
—
5
mA Tj = 25°C, VD = 6 V, RL = 6 ,
IRGT
—
—
5
mA RG = 330
IRGT
—
—
5
mA
Gate non-trigger voltage
Thermal resistance
VGD
0.2
—
—
V
Tj = 125°C, VD = 1/2 VDRM
Rth (j-a)
—
—
65
°C/W Junction to ambiebtNote3
Critical-rate of rise of off-state
(dv/dt)c
0.5
—
—
V/s Tj = 125°C
commutating voltageNote4
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. Soldering with ceramic plate (25 mm×25 mm×t0.7 mm)
4. Test conditions of the critical-rate of rise of off-state commutating voltage are shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 0.4 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS0970EJ0001 Rev.0.01
Nov 28, 2012
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