BAV300(2006) View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

View to exact match

BAV300
(Rev.:2006)

Small Signal Switching Diodes, High Voltage

Vishay Semiconductors 

BAV300 / 301 / 302 / 303

Vishay Semiconductors

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

Junction to ambient air

mounted on epoxy-glass hard

RthJA

500

K/W

tissue, Fig. 4

35 µm copper clad, 0.9 mm2

copper area per electrode

Junction temperature

Tj

175

°C

Storage temperature range

Tstg

- 65 to + 175

°C

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Forward voltage

Reverse current

Breakdown voltage

IF = 100 mA

VR = 50 V

VR = 100 V

VR = 150 V

VR = 200 V

Tj = 100 °C, VR = 50 V

Tj = 100 °C, VR = 100 V

Tj = 100 °C, VR = 150V

Tj = 100 °C, VR = 200V

IR = 100 µA, tp/T = 0.01,

tp = 0.3 ms

IR = 100 µA, tp/T = 0.01,

tp = 0.3 ms

Diode capacitance

Differential forward resistance

Reverse recovery time

VR = 0, f = 1 MHz

IF = 10 mA

IF = IR = 30 mA, iR = 3 mA,

RL = 100 Ω

Part

Symbol

Min

VF

BAV300

IR

BAV301

IR

BAV302

IR

BAV303

IR

BAV300

IR

BAV301

IR

BAV302

IR

BAV303

IR

BAV300 V(BR)

60

BAV301 V(BR)

120

BAV302 V(BR)

200

BAV303 V(BR)

250

CD

rf

trr

Typ.

Max

Unit

1000

mV

100

nA

100

nA

100

nA

100

nA

15

µA

15

µA

15

µA

15

µA

V

V

V

V

1.5

pF

5

Ω

50

ns

www.vishay.com

2

Document Number 85545

Rev. 1.9, 07-Mar-06

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