BCR2PM(2002) View Datasheet(PDF) - MITSUBISHI ELECTRIC

Part Name

Description

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BCR2PM
(Rev.:2002)

LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

MITSUBISHI ELECTRIC  

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR2PM

LOW POWER USE

INSULATED TYPE, PLANAR PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test conditions

IDRM

Repetitive peak off-state current

Tj=125°C, VDRM applied

VTM

On-state voltage

Ta=25°C, ITM=1.5A, Instantaneous measurement

VRGT !

VRGT #

Gate trigger voltage ✽2

@

Tj=25°C, VD=6V, RL=6Ω, RG=330Ω

#

IRGT !

IRGT #

Gate trigger current ✽2

@

Tj=25°C, VD=6V, RL=6Ω, RG=330Ω

#

VGD

Gate non-trigger voltage

Tj=125°C, VD=1/2VDRM

Rth (j-a)

Thermal resistance

Junction to ambient, Natural convection

✽2. Measurement using the gate trigger characteristics measurement circuit.

Limits

Min. Typ. Max.

—

—

0.5

—

—

1.6

—

—

2.0

—

—

2.0

—

—

10

—

—

10

0.1

—

—

—

—

40

Unit

mA

V

V

V

mA

mA

V

°C/ W

GATE TRIGGER CHARACTERISTICS TEST CIRCUITS

6Ω

6Ω

6V

A

6V

A

V

RG

V

RG

TEST PROCEDURE 2 TEST PROCEDURE 3

PERFORMANCE CURVES

MAXIMUM ON-STATE CHARACTERISTICS

102

7

5 Tj = 25°C

3

2

101

7

5

3

2

100

7

5

3

2

10–1

0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8

ON-STATE VOLTAGE (V)

RATED SURGE ON-STATE CURRENT

10

9

8

7

6

5

4

3

2

1

0

100 2 3 4 5 7 101 2 3 4 5 7 102

CONDUCTION TIME

(CYCLES AT 60Hz)

Mar.2002

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