DS2102SY View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

View to exact match

DS2102SY

Rectifier Diode

Dynex Semiconductor 

DS2102SY

CHARACTERISTICS

Symbol

Parameter

VFM

Forward voltage

IRM

Peak reverse current

QS

Total stored charge

Irr

Peak reverse recovery current

V

Threshold voltage

TO

r

Slope resistance

T

Conditions

At 3000A peak, Tcase = 25oC

At VRRM, Tcase = 175oC

IF = 2000A, dIRR/dt = 3A/µs

T = 175˚C, V = 100V

case

R

At T = 175˚C

vj

At T = 175˚C

vj

Min. Max. Units

-

1.0

V

-

100 mA

- 2600 µC

-

120

A

-

0.75 V

- 0.0415 mΩ

CURVES

10000

Measured under pulse conditions

12000

8000

10000

6000

8000

4000

2000

Tj = 175˚C

Tj = 25˚C

6000

4000

2000

0

0

0.4

0.6

0.8

1.0

1.2

0

Instantaneous forward voltage, VF - (V)

Fig.2 Maximum (limit) forward characteristics

dc

Half wave

3 phase

6 phase

2000

4000

6000

8000

Mean forward current, IF(AV) - (A)

10000

Fig.3 Dissipation curves

VFM Equation:-

VFM = A + Bln (IF) + C.IF+D.√IF

Where

A = 0.402091

B = 0.011718

C = 6.48 x 10–5

D = 0.005977

these values are valid for Tj = 125˚C for IF 500A to 10000A

4/7

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