DG626BH25 View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

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DG626BH25

Gate Turn-off Thyristor

Dynex Semiconductor 

DG646BH25

4.0

Conditions: Tj = 125˚C, IFGM = 30A,

CS = 2.0µF, VD = 1500V,

RS = 10Ω, dIT/dt = 300A/µs, dIF/dt = 30A/µs

3.0

tr

2.0

td

1.0

0

0

500

1000

1500

2000

2500

3000

On-state current IT - (A)

Fig.13 Delay time & rise time vs turn-on current

5.0

Conditions:

Tj = 125˚C, IT = 2000A,

CS = 2.0µF,

RS = 10 Ohms,

4.0

dI/dt = 300A/µs,

dIFG/dt = 30A/µs,

VD = 1500V

3.0

tr

2.0

1.0

td

0

0

20

40

60

80

Peak forward gate current IFGM - (A)

Fig.14 Delay time & rise time vs peak forward gate current

9/19

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