31DF2 View Datasheet(PDF) - Galaxy Semi-Conductor
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31DF2 Datasheet PDF : 2 Pages
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RATINGS AND CHARACTERISTIC CURVES
31DF1(Z) --- 31DF2(Z)
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
N 1.
N 1.
trr
+0.5A
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE2)
NOTES:1.RISETIME=7ns MAX.INPUTIMPEDANCE=1M . 22pF. JJJJ
2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
0
-0.25A
-1.0A
1cm
SETTIMEBASEFOR10 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
FIG.3 -- FORWARD DERATING CURVE
100
40
20
10
4.0
2.0
1.0
0.4
0.2
0.1
0.2 0.4
0.6 0.8
TJ=25
Pulse Width=300ยตs
1.0 1.2 1.4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
1.6
1.4
1.2
1.0
0.8
Single Phase
0 . 6 Half Wave60HZ
Resistive or
0 . 4 InductiveLoad
0 . 2 0.375"(9.5mm)LeadLength
0
0
25
50 75 100 125
150
AMBIENT TEMPERATURE,
FIG.4-- TYPICAL JUNCTION CAPACITANCE
1000
600
400
200
100
60
40
20
TJ=25
f=1.0MHz
10
0.1 0.2 0.4 1 2 4
10 20 40 100
REVERSE VOLTAGE, VOLTS
FIG.5-- PEAK FORWORD SURGE CURRENT
150
8.3ms Single Half
Sine-Wave
125
100
75
50
25
0
1
5 10
50 100
NUMBER OF CYCLES AT 60HZ
www.galaxycn.com
Document Number 0264016
BLGALAXY ELECTRICAL
2.
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