Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 450 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 5 A
VDS = 10 V, ID = 5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Turn−on time
ton
Switching time
Fall time
tf
Turn−off time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
toff
Qg
Qgs
VDD ≈ 400 V, VGS = 10 V, ID = 10 A
Qgd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
—
—
IDR = 10 A, VGS = 0 V
IDR = 10 A, VGS = 0 V
dIDR / dt = 100 A / μs
Marking
2SK3126
Min Typ. Max Unit
—
—
±10
μA
±30 —
—
V
—
—
100
μA
450 —
—
V
2.4
—
3.4
V
— 0.48 0.65 Ω
3.5 7.5
—
S
— 1400 —
— 240 —
pF
— 590 —
—
35
—
—
50
—
ns
—
80
—
— 260 —
—
35
—
—
19
—
nC
—
16
—
Min Typ. Max Unit
—
—
10
A
—
—
40
A
—
—
−1.7
V
— 1400 —
ns
—
14
—
μC
K3126
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-06