2SD2142K
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Datasheet
Symbol
Values
Unit
VCBO
30
V
VCES
30
V
VEBO
10
V
IC
300
mA
PD
200
mW
Tj
150
℃
Tstg
-55 to +150
℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Collector-base breakdown voltage BVCBO IC = 10μA
30
-
-
V
Collector-emitter breakdown
voltage
BVCES IC = 100μA
30
-
-
V
Emitter-base breakdown voltage BVEBO IE = 10μA
10
-
-
V
Collector cut-off current
ICBO VCB = 30V
-
- 100 nA
Emitter cut-off current
IEBO VEB = 10V
-
- 100 nA
Collector-emitter saturation voltage
VCE(sat) IC = 100mA, IB = 0.1mA
-
- 1.5 V
Base-emitter turn
on voltage
VBE(on)*1 VCE = 5V, IC = 100mA
-
-
2
V
DC current gain
Transition frequency
Output capacitance
hFE1 VCE = 5V, IC = 10mA
hFE2*1 VCE = 5V, IC = 100mA
f
*2
T
VCE = 5V, IE = -10mA,
f = 100MHz
Cob
VCB = 10V, IE = 0A,
f = 100kHz
5k
-
10k -
125 -
- 5.4
-
-
-
- MHz
- pF
*1 Pulse test
*2 Characteristics of built-in transistor
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