D2142K View Datasheet(PDF) - ROHM Semiconductor

Part Name

Description

View to exact match

D2142K

High-gain Amplifier Transistor (30V, 300mA)

ROHM Semiconductor 

2SD2142K

　 　 　 　　 　

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

　 　 　 　 　 　 　 　 Datasheet

Symbol

Values

Unit

VCBO

30

V

VCES

30

V

VEBO

10

V

IC

300

mA

PD

200

mW

Tj

150

℃

Tstg

-55 to +150

℃

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min. Typ. Max.

Collector-base breakdown voltage BVCBO IC = 10μA

30

-

-

V

Collector-emitter breakdown

voltage

BVCES IC = 100μA

30

-

-

V

Emitter-base breakdown voltage BVEBO IE = 10μA

10

-

-

V

Collector cut-off current

ICBO VCB = 30V

-

- 100 nA

Emitter cut-off current

IEBO VEB = 10V

-

- 100 nA

Collector-emitter saturation voltage

VCE(sat) IC = 100mA, IB = 0.1mA

-

- 1.5 V

Base-emitter turn

on voltage

VBE(on)*1 VCE = 5V, IC = 100mA

-

-

2

V

DC current gain

Transition frequency

Output capacitance

hFE1 VCE = 5V, IC = 10mA

hFE2*1 VCE = 5V, IC = 100mA

f

*2

T

VCE = 5V, IE = -10mA,

f = 100MHz

Cob

VCB = 10V, IE = 0A,

f = 100kHz

5k

-

10k -

125 -

- 5.4

-

-

-

- MHz

- pF

*1 Pulse test

*2 Characteristics of built-in transistor

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　

　

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20150730 - Rev.002

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