CR08AS View Datasheet(PDF) - MITSUBISHI ELECTRIC
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Description
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CR08AS Datasheet PDF : 6 Pages
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ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
RESISTIVE,
140
INDUCTIVE
LOADS
θ
120
NATURAL 360°
100
CONVECTION
θ = 180°
80
65°C/ W
60
90°C/ W
40
20
Rth(j – a) = 200°C/ W
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
25 25 t0.7
140 ALUMINUM BOARD
WITH SOLDERING
θθ
120
360°
100
RESISTIVE LOADS
NATURAL
80
CONVECTION
60
40
60° 120°
20
θ = 30° 90° 180°
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
160
25 25 t0.7
140 ALUMINUM BOARD
WITH SOLDERING
120
θ
360°
RESISTIVE,
100
INDUCTIVE
80
LOADS
NATURAL
60
CONVECTION
40
θ = 30° 60° 120° 270°
20
90° 180°
DC
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR08AS
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
1.6
θ = 30° 60° 90° 120°
1.4
180°
1.2
1.0
0.8
0.6
0.4
0.2
0
0
θθ
360°
RESISTIVE LOADS
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
1.6
90° 180°
1.4
θ = 30° 60° 120° 270°
DC
1.2
1.0
0.8
0.6
0.4
0.2
0
0
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
RGK = 1kΩ
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
Feb.1999
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