2SC5939 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
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2SC5939 Datasheet PDF : 3 Pages
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Transistors
2SC5939
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
• High transition frequency fT
• Small collector output capacitance (Common base, input open cir-
cuited) Cob and reverse transfer capacitance (Common base) Crb
• SSS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
15
V
Collector-emitter voltage (Base open) VCEO
10
V
Emitter-base voltage (Collector open) VEBO
3
V
Collector current
IC
50
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg −55 to +125 °C
0.33+–00..0025
3
0.23+–00..0025
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5˚
Unit: mm
0.10+–00..0025
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
Marking Symbol: 1S
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
hFE ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCEO
VEBO
ICBO
hFE
∆hFE
VCE(sat)
fT
Cob
IC = 2 mA, IB = 0
IE = 10 µA, IC = 0
VCB = 10 V, IE = 0
VCE = 4 V, IC = 5 mA
VCE = 4 V, IC = 100 µA
VCE = 4 V, IC = 5 mA
IC = 20 mA, IB = 4 mA
VCE = 4 V, IE = −5 mA, f = 200 MHz
VCB = 4 V, IE = 0, f = 1 MHz
10
V
3
V
1
µA
75
400
0.75
1.6
0.5
V
1.4 1.9 2.7 GHz
1.4
pF
Reverse transfer capacitance
(Common base)
Crb VCB = 4 V, IE = 0, f = 1 MHz
0.45
pF
Collector-base parameter
rbb' • CC VCB = 4 V, IE = −5 mA, f = 31.9 MHz
11
ps
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2004
SJC00306AED
1
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