C4880 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

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C4880

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR )CEO Collector-emitter breakdown voltage IC=10mA; RBE=∞

V(BR )EBO Emitter-base breakdown voltage

IE=1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=10A; IB=2.5 A

VBEsat Base-emitter saturation voltage

IC=10A; IB=2.5 A

ICES

Collector cut-off current

VCE=1700V;RBE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

Product Specification

2SC4880

MIN TYP. MAX UNIT

900

V

5

V

5.0

V

1.5

V

500 μA

100 μA

8

40

2

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