2SC4829 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

View to exact match

2SC4829

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC4829

Ordering Information

2SC4829B

2SC4829C

hFE

60 to 120

100 to 200

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

iC (peak)

PC

Tj

Tstg

Ratings

Unit

100

V

100

V

3

V

0.2

A

0.5

A

0.9

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Collector to base breakdown

voltage

V(BR)CBO

100

Collector to emitter breakdown V(BR)CEO 100

voltage

Emitter cutoff current

I EBO

—

Collector cutoff current

I CBO

—

DC current

2SC4829B

hFE

60

transfer ratio

2SC4829C

hFE

100

Base to emitter voltage

VBE

—

Collector to emitter saturation VCE(sat) —

voltage

Gain bandwidth product

fT

800

Collector output capacitance Cob

—

Typ Max Unit

—

—

V

—

—

V

—

10

µA

—

1.0 µA

—

120

—

200

—

1.0 V

—

1.0 V

1100 —

4.2 6.0

MHz

pF

Test conditions

IC = 10 µA, IE = 0

IC = 1 mA, RBE = ∞

VEB = 3 V, IC = 0

VCB = 80 V, IE = 0

VCE = 10 V, IC = 10 mA

VCE = 10 V, IC = 10 mA

IC = 100 mA, IB = 10 mA

VCE = 10 V, IE = 100 mA

VCB = 30 V, IE = 0, f = 1 MHz

2

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