2SA2018 View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
View to exact match
2SA2018 Datasheet PDF : 12 Pages
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2SA2030 / 2SA2018 / 2SA2119K
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
2SA2030
2SA2018
2SA2119K
Datasheet
Symbol
Values
Unit
VCBO
-15
V
VCEO
-12
V
VEBO
-6
V
IC
-500
mA
ICP*1
-1
A
150
PD*2
150
mW
200
Tj
150
℃
Tstg
-55 to +150
℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Collector-base breakdown
voltage
BVCBO IC = -10μA
-15 -
-
V
Collector-emitter breakdown
voltage
BVCEO IC = -1mA
-12 -
-
V
Emitter-base breakdown voltage BVEBO IE = -10μA
-6
-
-
V
Collector cut-off current
ICBO VCB = -15V
-
- -100 nA
Emitter cut-off current
IEBO VEB = -6V
-
- -100 nA
Collector-emitter saturation voltage VCE(sat) IC = -200mA, IB = -10mA - -100 -250 mV
DC current gain
hFE VCE = -2V, IC = -10mA 270 - 680 -
Transition frequency
fT
VCE = -2V, IE = 10mA,
f = 100MHz
- 260 - MHz
Output capacitance
Cob
VCB = -10V, IE = 0A,
f = 1MHz
- 6.5 - pF
* Pw=1ms, Single Pulse.
*2 Each terminal mounted on a reference land.
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20150910 - Rev.003
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