A1789 View Datasheet(PDF) - Quanzhou Jinmei Electronic

Part Name

Description

View to exact match

A1789

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; IB=0

V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=-6A;IB=-0.6 A

VBEsat Base-emitter saturation voltage

IC=-6A;IB=-0.6 A

ICBO

Collector cut-off current

VCB=-60V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-2A ; VCE=-2V

‹ hFE classifications

D

E

F

60-120 100-200 160-320

Product Specification

2SA1789

MIN TYP. MAX UNIT

-60

V

-60

V

-5

V

-0.5

V

-2.0

V

-10 μA

-10 μA

60

320

2

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