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A1376K View Datasheet(PDF) - NEC => Renesas Technology

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A1376K Datasheet PDF : 6 Pages
1 2 3 4 5 6
DATA SHEET
SILICON TRANSISTORS
2SA1376, 1376A
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH VOLTAGE AMPLIFIERS
FEATURES
• High voltage
VCEO: 180 V / 200 V
(2SA1376/2SA1376A)
• Excellent hFE linearity
• High total power dissipation in small dimension:
PT: 0.75 W
• Complementary transistor with 2SC3478 and 2SC3478A
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
2SA1376/2SA1376A
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
200
V
Collector to emitter voltage
VCEO
180/200
V
Emitter to base voltage
VEBO
5
V
Collector current (DC)
IC(DC)
100
mA
Collector current (pulse)
IC(pulse)*
200
mA
Total power dissipation
PT
0.75
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
* PW 10 ms, duty cycle 50%
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC base voltage
Collector saturation voltage
Base saturation voltage
Output capacitance
Gain bandwidth product
Turn-on time
Turn-off time
ICBO
IEBO
hFE1 **
hFE2 **
VBE **
VCE(sat) **
VBE(sat) **
Cob
fT
ton
toff
VCB = 200 V, IE = 0
VEB = 5 V, IC = 0
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 100 mA
VCE = 10 V, IC = 10 mA
IC = 50 mA, IB = 5 mA
IC = 50 mA, IB = 5 mA
VCB = 30 V, IE = 0, f = 1.0 MHz
VCE = 10 V, IE = 10 mA
IC = 10 mA, IB1 = IB2 = 1 mA,
VCC = –10 V
** Pulse test PW 350 µs, duty cycle 2% per pulsed
PACKAGE DRAWING (UNIT: mm)
2SA1376/2SA1376A
MIN.
135
81
600
80
TYP.
300/200
MAX.
100
100
600/400
650
0.2
0.8
3.5
120
0.16
1.5
700
0.3
1.2
4.0
Unit
nA
nA
mV
V
V
pF
MHz
µs
µs
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16194EJ1V0DS00
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928

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