IRFR214 View Datasheet(PDF) - Intersil

Part Name

Description

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IRFR214

2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs

Intersil 

IRFR214, IRFU214

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Continuous Drain Current

TC = 100oC . . . . . . . . .

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ID

ID

Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Eas

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

IRFR214, IRFU214

250

250

2.2

1.4

8.8

±20

25

0.20

61

-55 to 150

300

260

UNITS

V

V

A

A

A

V

W

W/oC

mJ

oC

oC

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC TO 125oC

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Drain to Source Breakdown Voltage

Gate to Threshold Voltage

Zero Gate Voltage Drain Current

On-State Drain Current

Gate to Source Leakage Current

Drain to Source On Resistance (Note 4)

Forward Transconductance (Note 4)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

BVDSS ID = 250µA, VGS = 0V

250

VGS(TH) VGS = VDS, ID = 250µA

2

IDSS VDS = Rated BVDSS, VGS = 0V

-

VDS

TJ =

=0.8 x

150oC

Rated

BVDSS,

VGS

=

0V

-

ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V

2.2

IGSS VGS = ±20V

-

rDS(ON) ID = 1.3A, VGS = 10V (Figure 8)

-

gfs

VDS = ≥ 50V, IDS = 1.3A

1.1

td(ON) VDD = 0.5 x Rated BVDSS, ID ≈ 2.7A, RGS = 24Ω,

-

RL = 4.5Ω, VGS = 10V

tr

MOSFET Switching Times are Essentially

-

Independent of Operating Temperature

td(OFF)

-

tf

-

Qg(TOT) VGS = 10V, ID ≈ 5.6A, VDS = 0.8 x Rated BVDSS,

-

(Figure 11)

Qgs Gate Charge is Essentially Independent of Oper- -

ating Temperature

Qgd

-

CISS VGS = 0V, VDS = 25V, f = 1.0MHz

-

(Figure 9)

COSS

-

CRSS

-

TYP MAX UNITS

-

-

V

-

4

V

-

25

µA

-

250

µA

-

-

A

-

±100

nA

1.6 2.000

Ω

-

-

S

7.0

-

ns

7.6

-

ns

16

-

ns

7.0

-

ns

-

10

nC

-

1.8

nC

-

5.5

nC

140

-

pF

42

-

pF

9.6

-

pF

4-384

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