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1SS389 View Datasheet(PDF) - Galaxy Semi-Conductor

Part Name
Description
View to exact match
1SS389
BILIN
Galaxy Semi-Conductor BILIN
1SS389 Datasheet PDF : 3 Pages
1 2 3
Schottky Barrier Diode
FEATURES
Low forward voltage.
Small package.
Pb
Lead-free
Production specification
1SS389
APPLICATIONS
High speed switching application.
ORDERING INFORMATION
Type No.
Marking
1SS389
S4
SOD-523
Package Code
SOD-523
MAXIMUM RATING @ Ta=25unless otherwise specified
Parameter
Symbol
Limits
Unit
Peak reverse voltage
DC Reverse voltage
Maximum(peak) forward current
Continuous forward current
Surge current
VRM
15
V
VR
10
V
IFM
200
mA
IF
100
mA
IFSM
1
A
Total power dissipation
Junction temperature
Storage temperature
Operating temperature range
Ptot
150
mW
Tj
125
Tstg
-55 to +125
Topr
-40 to +100
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Reverse breakdown voltage
Forward voltage
Reverse current
Diode capacitance
Symbol Min.
V(BR)R
10
VF
IR
Cd
Typ. Max. Unit
V
0.18
V
0.23 0.30 V
0.35 0.50 V
20 μA
20 40 pF
Conditions
IR=50μA
IF=1mA
IF=5mA
IF=100mA
VR=10V
VR=0,f=1MHz
H005
Rev.A
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