1SS387 View Datasheet(PDF) - Galaxy Semi-Conductor

Part Name

Description

View to exact match

1SS387

High Speed Switching Diode

Galaxy Semi-Conductor 

BL Galaxy Electrical

Production specification

High Speed Switching Diode

FEATURES

z Low forward voltage.

z Fast reverse recovery time.

z Small total capacitance.

Pb

Lead-free

APPLICATIONS

z High-speed switching in surface mounted circuits.

ORDERING INFORMATION

Type No.

Marking

1SS387

G

1SS387

SOD-523

Package Code

SOD-523

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Limits

Unit

Repetitive peak reverse voltage

VRRM

85

V

Reverse voltage

VR

80

V

Continuous forward current

Surge current

IF

100

mA

IFSM

1

A

Total power dissipation

Ptot

150

mW

Junction temperature

Storage temperature

Tj

125

℃

Tstg

-55-125

℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Forward voltage

Reverse current

Diode capacitance

Reverse recovery time

Symbol Min. Typ. Max. Unit

0.62

V

VF

0.75

V

0.98 1.2 V

0.1 μA

IR

0.5 μA

Cd

0.5 3

pF

trr

1.6 4

ns

Conditions

IF=1mA

IF=10mA

IF=100mA

VR=30V

VR=80V

VR=0,f=1MHz

IF=10mA

Document number: BL/SSSDD003

Rev.A

www.galaxycn.com

1

Share Link: