12N50 View Datasheet(PDF) - Unisonic Technologies

Part Name

Description

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12N50

12A, 500V N-CHANNEL POWER MOSFET

Unisonic Technologies 

12N50

Power MOSFET

 ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

500

V

Gate-Source Voltage

Drain Current

Continuous (TC=25°C)

Pulsed (Note 3)

Avalanche Current (Note 3)

VGSS

ID

IDM

IAR

±30

V

12 (Note 2)

A

48 (Note 2)

A

12

A

Avalanche Energy

Single Pulsed (Note 4)

Repetitive (Note 5)

EAS

EAR

684

mJ

19.5

mJ

Peak Diode Recovery dv/dt (Note 5)

dv/dt

4.5

V/ns

Power Dissipation

(TC=25°C)

TO-220/ TO-263

TO-220F/TO-220F1

TO-220F2

TO-220/TO-263

PD

195

42

W

43

1.53

Derate above 25°C TO-220F/TO-220F1

0.33

W/°C

TO-220F2

0.34

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Drain current limited by maximum junction temperature

3. Repetitive Rating: Pulse width limited by maximum junction temperature

4. L =9.5mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

5. ISD ≤ 12A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

 THERMAL DATA

PARAMETER

Junction to Ambient

TO-220/ TO-263

Junction to Case

TO-220F/TO-220F1

TO-220F2

SYMBOL

θJA

θJC

RATINGS

62.5

0.65

3.0

2.9

UNIT

°C/W

°C/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 6

QW-R502-528.F

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