10XS3535(2011) View Datasheet(PDF) - Freescale Semiconductor
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Description
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10XS3535
(Rev.:2011)
(Rev.:2011)
Freescale Semiconductor
10XS3535 Datasheet PDF : 43 Pages
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ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 3.0 V ≤ VCC ≤ 5.5 V, 7.0 V ≤ VBAT ≤ 2 0V, - 40 °C ≤ TA ≤ 125 °C, GND = 0 V, unless
otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless
otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
HIGH BEAM OUT3
Output Drain-to-Source ON Resistance (IOUT = 5.5 A, TA = 25 °C)
VBAT = 13.5 V
VBAT = 7.0 V
RDS(ON)25
–
–
Output Drain-to-Source ON Resistance (IOUT = 5.5 A, VBAT = 13.5 V
RDS(ON)150
TA = 150 °C)(24)
–
Reverse Source-to-Drain ON Resistance (IOUT = -5.5 A, TA = 25 °C)(25)
RSD(ON)25
VBAT = -12 V
–
mΩ
–
10
–
15
mΩ
–
17.0
mΩ
–
20
High Over-current Shutdown Threshold 1
VBAT = 16 V, TA = -40 °C
VBAT = 16 V, TA = 25 °C
VBAT = 16 V, TA = 125 °C
High Over-current Shutdown Threshold 2
Low Over-current Shutdown Threshold
Open Load Current Threshold in ON State(26)
IOCHI1
IOCHI2
IOCLO
IOL
65.6
82.0
98.4
A
70.1
83.5
96.9
68.8
82.0
95.2
65.5
78.0
90.5
27.5
34.4
41.3
A
12.5
15.7
18.9
A
0.1
0.4
1.0
A
Open Load Current Threshold in ON State with LED(27)
VOL = VBAT - 0.8 V
Current Sense Full-scale Range(28)
IOLLED
ICS FSR
mA
4.0
10.0
20.0
–
12.7
–
A
Severe short-circuit impedance range(24)
RSC1(OUT3)
100
–
–
mΩ
Notes
24. Parameter guaranteed by design; however, it is not production tested.
25. Source-to-Drain ON Resistance (Reverse Drain-to-Source ON Resistance) with negative polarity VBAT.
26. OLLED3, bit D2 in SI data is set to [0].
27. OLLED3, bit D2 in SI data is set to [1].
28. For typical value of ICS FSR, ICSNS = 5.0 mA. If the range is exceeded, no current clamp and the precision is no more guaranteed.
10XS353
10
Analog Integrated Circuit Device Data
Freescale Semiconductor
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