100NTT View Datasheet(PDF) - Naina Semiconductor ltd.
Part Name
Description
View to exact match
100NTT Datasheet PDF : 2 Pages
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Naina Semiconductor Ltd.
100NTT
Thyristor – Thyristor Module
Features
• Improved glass passivation for high reliability
• Exceptional stability at high temperatures
• High di/dt and dv/dt capabilities
• Low thermal resistance
• Available in both M1 & M2 package
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter
Symbol Values
Maximum average forward current @ TJ =
850C
IF(AV)
100
Maximum average RMS forward current
IF(RMS)
220
Maximum non-repetitive surge current @ t
= 10ms
IFSM
2000
Maximum I2t for fusing @ t = 10ms
I2t
20
Units
A
A
A
kA2s
M1 & M2 PACKAGE
Thermal & Mechanical Specifications (TA = 250C unless otherwise noted)
Parameter
Symbol
Operating junction temperature range
Thermal resistance, junction to case
TJ
Rth(JC)
Values
-65 to +125
1.1
Units
0C
0C/W
Electrical Characteristics (TA = 250C unless otherwise noted)
Parameter
Maximum average on-state current
Maximum repetitive peak reverse voltage range
Forward voltage drop
Gate current required to trigger
Gate voltage required to trigger
Holding current range
Maximum latching current
Critical rate of rise of off-state voltage
RMS isolated voltage
Symbol
IT(max)
VRRM
VFM
IGT
VGT
IH
IL
dv/dt
VISO
Values
100
200 to 1600
1.55
100
2
5 to 100
400
300
2500
Units
A
V
V
A
V
mA
mA
V/µs
V
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com
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