30F121 View Datasheet(PDF) - Toshiba

Part Name

Description

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30F121

Insulated Gate Bipolar Transistor

Toshiba 

carrier.

The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in

inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible

power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.

(1) IGBTs also featuring fast switching

(2) Low collector-emitter saturation voltage even in the large current area

(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications

(4) High input impedance allows voltage drives

(5) Available in a variety of packages

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