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DH321 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
DH321
Fairchild
Fairchild Semiconductor Fairchild
DH321 Datasheet PDF : 20 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
FSDH321, FSDL321
Electrical Characteristics (Sense FET Part)
(Ta = 25°C unless otherwise specified)
Parameter
Sense FET SECTION
Drain-Source Breakdown Voltage
Startup Voltage (Vstr) Breakdown
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance
(Note)
Forward Trans conductance (Note)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source + Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
Symbol
Condition
Min. Typ. Max. Unit
BVDSS
BVSTR
IDSS
VGS=0V, ID=50µA
VCC=0V, ID=1mA
VDS=Max. Rating,
VGS=0V
VDS=0.8Max. Rating,
VGS=0V, TC=125°C
650 720
-
V
650 720
-
V
-
-
25
µA
-
-
200 µA
RDS(ON) VGS=10V, ID=0.5A
-
14 19
gfs
VDS=50V, ID=0.5A
1.0 1.3
-
S
CISS
COSS
CRSS
VGS=0V, VDS=25V,
f=1MHz
-
162
-
-
18
-
pF
-
3.8
-
td(on) VDD=0.5B VDSS,
-
9.5
-
tr
ID=1.0A
-
19
-
(MOSFET switching time
td(off) is essentially
-
33
-
ns
tf
independent of
operating temperature)
-
42
-
Qg
VGS=10V, ID=1.0A,
VDS=0.5B VDSS
-
7.0
-
Qgs
(MOSFET switching time -
3.1
-
is essentially
nC
Qgd
independent of operating -
0.4
-
temperature)
Note:
1. Pulse test: Pulse width 300µS, duty 2%
2. S = -1--
R
5

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