datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

A1374 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name
Description
View to exact match
A1374
Hitachi
Hitachi -> Renesas Electronics Hitachi
A1374 Datasheet PDF : 5 Pages
1 2 3 4 5
2SA1374
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Ratings
Unit
–55
V
–55
V
–5
V
–100
mA
–30
mA
300
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown V(BR)CBO –55 —
voltage
Collector to emitter breakdown V(BR)CEO –55 —
voltage
Emitter to base breakdown
V(BR)EBO
–5
voltage
Collector cutoff current
I CBO
Emitter cutoff current
I EBO
DC current transfer ratio
hFE*1
160 —
Base to emitter voltage
VBE
–0.66
Collector to emitter saturation VCE(sat)
voltage
–0.1
Gain bandwidth product
fT
250
Collector output capacitance Cob
2.5
Note: 1. The 2SA1374 is grouped by hFE as follows.
C
D
160 to 320 250 to 500
Max
–0.1
–0.05
500
–0.75
–0.5
Unit
V
V
V
µA
µA
V
V
MHz
pF
Test conditions
IC = –10 µA, IE = 0
IC = –1 mA, RBE =
IE = –10 µA, IC = 0
VCB = –18 V, IE = 0
VEB = –2 V, IE = 0
VCE = –12 V, IC = –2 mA
VCE = –12 V, IC = –2 mA
IC = –10 mA, IB = –1 mA
VCE = –12 V, IC = –2 mA
VCB = –10 V, IE = 0, f = 1 MHz
See characteristic curves of 2SA836.
2

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]