GP401LSS18 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
View to exact match
GP401LSS18 Datasheet PDF : 11 Pages
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GP401LSS18
200
Tcase = 25˚C
A
VGE = ±15V
175 VCE = 900V
B
150
C
125
100
75
50
25
A: Rg = 13Ω
B: Rg = 6.8Ω
C: Rg = 4.3Ω
0
0 50 100 150 200 250 300 350 400
Collector current, IC - (A)
Fig.9 Typical turn-off energy vs collector current
250
Tcase = 125˚C
225 VGE = ±15V
A
VCE = 900V
200
B
C
175
150
125
100
75
50
A: Rg = 13Ω
25
B: Rg = 6.8Ω
C: Rg = 4.3Ω
0
0 50 100 150 200 250 300 350 400
Collector current, IC - (A)
Fig.10 Typical turn-off energy vs collector current
60
VGE = ±15V
VCE = 900V
50 Rg = 4.3Ω
40
30
20
Tcase = 125˚C
Tcase = 25˚C
1200
1000
800
600
400
td(off)
td(on)
tf
Tcase = 125˚C
VGE = ±15V
VCE = 900V
Rg = 4.3Ω
10
200
tr
0
0 50 100 150 200 250 300 350 400
Collector current, IT - (A)
Fig.11 Typical diode reverse recovery charge vs collector current
0
0 50 100 150 200 250 300 350 400
Collector current, IC - (A)
Fig.12 Typical switching characteristics
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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