DCR1374SBA10 View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

View to exact match

DCR1374SBA10

Phase Control Thyristor

Dynex Semiconductor 

DCR1374SBA

10000

Conditions:

Tj = 125˚C

IT = 800A

VR = 100V

tp = 1ms - Trapezoidal

100

Table gives pulse power PGM in Watts

Pulse width Pulse frequency Hz

µs

50 100 400

100 150 150 150

200 150 150 125

500 150 150 100

10 1ms 150 100 25

10ms 20 -

-

5W10W20W 50W100W

1000

100

0.1

IT

QS

dI/dt

IRR

1.0

10

100

Rate of decay of on-state current dI/dt - (A/µs)

1

Upper limit 95%

VGD

0.1

0.001

Lower limit 5%

Region of certain

triggering

0.01

0.1

1

10

Gate trigger current IGT - (A)

Fig.4 Stored charge

Fig.5 Gate characteristics

100

0.1

I2t = Î2 x t

2

Anode side cooled

75

0.01

Double side cooled

50

8

7

6

25

I2t

5

4

3

0

1

10 1 2 3 4 5 10 20 30 50

ms

Cycles at 50Hz

Duration

Fig.6 Surge (non-repetitive) on-state current vs time (with

50% VRRM at Tcase 125˚C)

0.001

Conduction

Effective thermal resistance

Junction to case ˚C/W

Double side Anode side

d.c.

0.0130

0.0210

Halfwave 0.0141

0.0221

3 phase 120˚ 0.0170

0.0250

0.0001

0.001

0.01

6 phase 60˚ 0.0200

0.1

1

0.0280

10

100

Time - (s)

Fig.7 Maximum (limit) transient thermal impedance -

junction to case (˚C/W)

6/9

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