DIM800FSS17-A000(2002) View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
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DIM800FSS17-A000 Datasheet PDF : 11 Pages
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DIM600DCM17-A000
TYPICAL CHARACTERISTICS
1200
Common emitter.
1100 Tcase = 25˚C
Vce is measured at power busbars
1000 and not the auxiliary terminals
900
800
700
600
500
400
300
200
VGE = 20V
15V
100
12V
10V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
1200
1100
1000
Common emitter.
Tcase = 125˚C
Vce is measured at power busbars
and not the auxiliary terminals
900
800
700
600
500
400
300
200
VGE = 20V
15V
100
12V
10V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
400
Conditions:
Vce = 900V
350 Tc = 125°C
Rg = 3.3Ω
300
250
200
150
100
50
0
0
Eoff
Eon
Erec
100 200 300 400 500 600 700 800
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
1600
1400
Tj = 25˚C
Tj = 125˚C
VF is measured at power busbars
and not the auxiliary terminals
1200
1000
800
600
400
200
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, VF - (V)
Fig. 6 Diode typical forward characteristics
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/11
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