DIM800DDM17-A000
1400
100
Diode
1200
Transistor
1000
800
10
600
1
0.001
IGBT
Diode
1
2
3
4
Ri (˚C/KW) 0.4391 3.1937 4.1465 10.2356
τi (ms)
0.045 2.8869 21.7141 152.6381
Ri (˚C/KW) 1.5612 5.7426 6.999 25.6068
τi (ms) 0.0063516 1.4746 13.9664 111.7517
0.01
0.1
1
10
Pulse width, tp - (s)
400
200
0
0
20 40 60 80 100 120 140 160
Case temperature, Tcase - (˚C)
Fig. 11 Transient thermal impedance
Fig. 12 DC current rating vs case temperature
8/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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