BUS48AP View Datasheet(PDF) - Inchange Semiconductor
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BUS48AP Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUS48AP
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH
450
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 8A; IB=B 1.6A
IC= 8A; IB=B 1.6A;TC= 100℃
VCE (sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 2.4A
VBE(sat) Base-Emitter Saturation Voltage
ICER
Collector Cutoff Current
ICEV
Collector Cutoff Current
IC= 8A; IB=B 1.6A
IC= 8A; IB=B 1.6A;TC= 100℃
VCE=rated VCER; RBE= 10Ω
VCE=rated VCER; RBE= 10Ω;TC=125℃
VCE=rated VCES; VBE(off)= 1.5V
VCE=rated VCES; VBE(off)= 1.5V;TC=125℃
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
V
1.5
2.0
V
5.0
V
1.6
1.6
V
0.5
3.0
mA
0.2
2.0
mA
0.1 mA
hFE
DC Current Gain
IC= 8A; VCE= 5V
8
COB
Output Capacitance
Switching times Resistive Load
IE= 0; VCB= 10V, ftest= 1MHz
350 pF
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
IC= 10A; IB1= 2A; VCC= 250V;
VBE(off)= 5V, Duty Cycle≤2%
0.2 μs
0.7 μs
2.0 μs
0.4 μs
isc Website：www.iscsemi.cn
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